STH265N6F6-2AG

STH265N6F6-2AG, STH265N6F6-6AG Automotive N-channel 60 V, 1.6 mΩ typ., 180 A STripFET™ F6 Power MOSFET in H²PAK-2 and H²PAK-6 packages Datasheet - production data TAB TAB 2 3 1 H2PAK-2 7 1 H2PAK-6 Figure 1: Internal schematic diagram D(TAB) D(TAB) G(1) G(1) Features Order code STH265N6F6-2AG STH265N6F6-6AG VDS 60 V 60 V RDS(on) max 2.1 mΩ 2.1 mΩ ID 180 A 180 A  Designed for automotive applications  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss Applications  Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. S(2, 3) H2PAK-2 Order code STH265N6F6-2AG STH265N6F6-6AG S(2, 3, 4, 5, 6, 7) H2PAK-6 SC06140_HP2AK-2-6 Table 1: Device summary Marking Package 265N6F6 H2PAK-2 265N6F6 H2PAK-6 Packaging Tape and reel Tape and ree...