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STx6NM60N
N-channel 600 V, 0.85 Ω, 4.6 A MDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK
Features
Type
VDSS (@Tjmax)
RDS(on) max
ID
STB6NM60N
t(s)STD6NM60N cSTD6NM60N-1 uSTF6NM60N rodSTP6NM60N
650 V 650 V 650 V 650 V 650 V
< 0.92 Ω < 0.92 Ω < 0.92 Ω < 0.92 Ω < 0.92 Ω
4.6 A 4.6 A 4.6 A 4.6 A (1) 4.6 A
P1. Limited only by maximum temperature allowed
te■ 100% avalanche tested le■ Low input capacitance and gate charge so■ Low gate input resistance
ObApplication
) -■ Switching applications
ct(sDescription
duThis series of devices implements second rogeneration MDmesh™ technology. This Prevolutionary Power MOSFET associates a new tevertical structure to the STMicroelectronics’ strip lelayout to yield one of the world’s lowest on-
resistance and gate charge. It is therefore suitable
sofor the most demanding high-efficiency Obconverters.
3 2 1
TO-220
3 1
DPAK
3 1
D²PAK
3 2 1
TO-220FP
IPAK
3
2 1
Figure 1. Internal schematic diagram
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