DatasheetsPDF.com

STB6NM60N Dataheets PDF



Part Number STB6NM60N
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-channel Power MOSFET
Datasheet STB6NM60N DatasheetSTB6NM60N Datasheet (PDF)

STx6NM60N N-channel 600 V, 0.85 Ω, 4.6 A MDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features Type VDSS (@Tjmax) RDS(on) max ID STB6NM60N t(s)STD6NM60N cSTD6NM60N-1 uSTF6NM60N rodSTP6NM60N 650 V 650 V 650 V 650 V 650 V < 0.92 Ω < 0.92 Ω < 0.92 Ω < 0.92 Ω < 0.92 Ω 4.6 A 4.6 A 4.6 A 4.6 A (1) 4.6 A P1. Limited only by maximum temperature allowed te■ 100% avalanche tested le■ Low input capacitance and gate charge so■ Low gate input resistance ObApplication ) -■ Switchin.

  STB6NM60N   STB6NM60N


Document
STx6NM60N N-channel 600 V, 0.85 Ω, 4.6 A MDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features Type VDSS (@Tjmax) RDS(on) max ID STB6NM60N t(s)STD6NM60N cSTD6NM60N-1 uSTF6NM60N rodSTP6NM60N 650 V 650 V 650 V 650 V 650 V < 0.92 Ω < 0.92 Ω < 0.92 Ω < 0.92 Ω < 0.92 Ω 4.6 A 4.6 A 4.6 A 4.6 A (1) 4.6 A P1. Limited only by maximum temperature allowed te■ 100% avalanche tested le■ Low input capacitance and gate charge so■ Low gate input resistance ObApplication ) -■ Switching applications ct(sDescription duThis series of devices implements second rogeneration MDmesh™ technology. This Prevolutionary Power MOSFET associates a new tevertical structure to the STMicroelectronics’ strip lelayout to yield one of the world’s lowest on- resistance and gate charge. It is therefore suitable sofor the most demanding high-efficiency Obconverters. 3 2 1 TO-220 3 1 DPAK 3 1 D²PAK 3 2 1 TO-220FP IPAK 3 2 1 Figure 1. Internal schematic diagram $.


STU6NF10 STB6NM60N STL15DN4F5


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)