Document
STB120NF10T4, STP120NF10, STW120NF10
N-channel 100 V, 9.0 mΩ typ., 110 A STripFET™ II Power MOSFETs in D²PAK, TO-220 and TO-247 packages
Datasheet - production data
TAB
TAB
D2PAK
TO-220
3 2 1
TO-247
3 2 1
Figure 1: Internal schematic diagram
D(2, TAB)
G(1) S(3)
Features
Order code STB120NF10T4
STP120NF10 STW120NF10
VDS 100 V
RDS(on) max. 10.5 mΩ
ID 110 A
Exceptional dv/dt capability 100% avalanche tested Low gate charge
Applications
Switching applications
Description
These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.
Order code STB120NF10T4
STP120NF10 STW120NF10
AM01475v1_noZen
Table 1: Device summary
Marking
Package
.