STD120N4F6

STB120N4F6, STD120N4F6 Automotive-grade N-channel 40 V, 3.5 mΩ typ., 80 A STripFET™ F6 Power MOSFETs in DPAK and D²PAK packages Datasheet - production data TAB 3 1 DPAK TAB 3 1 D²PAK Features Order codes STB120N4F6 STD120N4F6 VDS 40 V 40 V RDS(on) max. 4 mΩ 4 mΩ ID 80 A 80 A Designed for automotive applications and AEC-Q101 qualified Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Figure 1. Internal schematic diagram '7$%RU * Application Switching applications Description These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages. 6 $0Y Order codes STB120N4F6 STD120N4F6 Table 1. Device summary Marking Package 120N4F6 D²PAK DPAK September 2015 This is information on a product in full production. DocID17042 Rev 6 Pac...