STP10NM60ND

STD10NM60ND, STF10NM60ND, STP10NM60ND N-channel 600 V, 0.57 Ω typ., 8 A, FDmesh™ II Power MOSFETs in DPAK, TO-220FP and TO-220 packages Datasheet - production data Features Order code STD10NM60ND STF10NM60ND STP10NM60ND VDS @ Tjmax. 650 V RDS(on) max. 0.60 Ω ID PTOT 70 W 8 A 25 W 70 W Figure 1: Internal schematic diagram D(2, TAB)  Fast-recovery body diode  Low gate charge and input capacitance  Low on-resistance RDS(on)  100% avalanche tested  High dv/dt ruggedness Applications  Switching applications G(1) S(3) Order code STD10NM60ND STF10NM60ND STP10NM60ND AM01475v1_noZen Description These FDmesh™ II Power MOSFETs with fastrecovery body diode are produced using MDmesh™ II technology. Utilizing a new striplayout vertical structure, these devices feature low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters. Table 1: Device summary Marking Package Packing DPAK Tape and reel 10N...