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STGB18N40LZT4, STGD18N40LZ, STGP18N40LZ
Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ
Datasheet - production data
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Features
• Designed for automotive applications and AEC-Q101 qualified
• 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH
• ESD gate-emitter protection • Gate-collector high voltage clamping • Logic level gate drive • Low saturation voltage • High pulsed current capability • Gate and gate-emitter resistor
Figure 1. Internal schematic diagram
C (2 or TAB)
Application
• Pencil coil electronic ignition driver
G (1)
RG RGE
Description
This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition system.
E (3)
SC30180
Order codes STGB18N40.