Document
STD150N3LLH6 STP150N3LLH6, STU150N3LLH6
N-channel 30 V, 0.0024 Ω , 80 A, DPAK, IPAK, TO-220 STripFET™ VI DeepGATE™ Power MOSFET
Features
Type STD150N3LLH6 STP150N3LLH6 STu150N3LLH6
VDSS 30 V 30 V 30 V
RDS(on) max 0.0028 Ω 0.0033 Ω 0.0033 Ω
ID 80 A 80 A 80 A
■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness
■ Low gate drive power losses
Application
■ Switching applications
Description
This product utilizes the 6th generation of design
rules of ST’s proprietary STripFET™ technology,
with a new gate structure.The resulting Power
MOSFET exhibits the lowest RDS(on) in all packages.
3 1
DPAK
IPAK
3
2 1
3 2 1
TO-220
Figure 1. Internal schematic diagram
$ 4!" OR
'
Table 1. Device summary Order codes
STD150N3LLH6 STP150N3LLH6 STU150N3LLH6
Marking 150N3LLH6 150N3LLH6 150N3LLH6
3
!-V
Package DPAK TO-220 IPAK
Packaging Tape and reel
Tube Tube
September 2009
Doc ID 15227 Rev 3
1/16
w.