IPB34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G
OptiMOS™2 Power-Transistor
Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max (TO252) ID
100 V 33 mW 27 A
175 °C operating temperature
Pb-free lead plating; RoHS compliant
Qualified according to JE...
