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F10N60

ROUM

10A 600V N-channel Enhancement Mode Power MOSFET


Description
10A 600V N-channel Enhancement Mode Power MOSFET F10N60 1 Description These silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. G 1 2 Features ● Fast Switching ● Low ON Resistance(Rdso...



ROUM

F10N60

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