7A 650V N-channel Enhancement Mode Power MOSFET
7N65/F7N65/I7N65/E7N65/B7N65/D7N65 7A 650V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel Enhanc...
Description
7N65/F7N65/I7N65/E7N65/B7N65/D7N65 7A 650V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.
VDSS = 650V RDS(on) (TYP)= 1.2Ω
ID = 7A
2 Features
● Fast Switching ● ESD Improved Capability ● Low ON Resistance(Rdson≤1.4Ω) ● Low Gate Charge(Typical Data:24nC) ● Low Reverse Transfer Capacitances(Typical:5.5pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test
3 Applications
● used in various power switching circuit for system miniaturization and higher efficiency.
● Power switch circuit of electron ballast and adaptor.
TO-220C TO-220F TO-262 TO-263 TO-252B TO-251B
4 Electrical Characteristics
4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted)
Value
Parameter
Symbol
7N65/I7N65/E7N65 /B7N65/D7N65
Maximum Drian-Source...
Similar Datasheet