N-channel MOSFET
STD96N3LLH6
N-channel 30 V, 0.0037 Ω, 80 A, DPAK STripFET™ VI DeepGATE™ Power MOSFET
Features
Type STD96N3LLH6
VDSS 3...
Description
STD96N3LLH6
N-channel 30 V, 0.0037 Ω, 80 A, DPAK STripFET™ VI DeepGATE™ Power MOSFET
Features
Type STD96N3LLH6
VDSS 30 V
RDS(on) max 0.0042 Ω
ID 80 A
■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness
■ Low gate drive power losses
Application
■ Switching applications – Automotive
Description
This product is an N-channel Power MOSFET that utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
3 1
DPAK
Figure 1. Internal schematic diagram
D (TAB or 2)
G(1)
Table 1. Device summary Order codes STD96N3LLH6
Marking 96N3LLH6
S(3)
AM01474v1
Package DPAK
Packaging Tape and reel
January 2011
Doc ID 18432 Rev 1
1/15
www.st.com
15
Contents
Contents
STD96N3LLH6
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Elect...
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