AM1330N

Analog Power AM1330N N-Channel 30V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 30 0.058 @VGS= 10 V 0.082 @VGS= 4.5V ID (A) 2.0 1.7 Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SC70-3 saves board space Fast switching speed High performance trench technology G D S ABSOLUTEMAXIMUMRATINGS (TA = 25 oCUNLESS OTHERWISENOTED) Parameter Symbol Maximum Units Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb VDS VGS TA=25oC TA=70oC ID IDM 30 ±20 V 2.0 1.7 A ±20 Continuous Source Current (Diode Conduction)a IS 1.6 A Po...