SPN1306

SPN1306 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN1306 is the N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter FEATURES  N-Channel 30V/0.95A,RDS(ON)=550mΩ@VGS=4.5V 30V/0.75A,RDS(ON)=650mΩ@VGS=2.5V 30V/0.65A,RDS(ON)=850mΩ@VGS=1.8V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  ESD protected  SOT-323 package design PIN CONFIGURATION( SOT-323 ) PART MARKING 2022/9/23 Ver.4 Page 1 SPN1306 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G S D Description Gate Source Drain ORDERING INFORMATION Part Number Package SPN1306S32RGB SOT-323 ※ SPN1306S32RGB : Tape Reel ; Pb – Free ; Halogen – Free ; 3K/Reel Part Marking 6A ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 30 V Gate –Source Voltage VGSS ±12 V Cont...