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SPN180T10 Dataheets PDF



Part Number SPN180T10
Manufacturers SYNC POWER
Logo SYNC POWER
Description N-Channel MOSFET
Datasheet SPN180T10 DatasheetSPN180T10 Datasheet (PDF)

SPN180T10 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN180T10 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits. It has been optimized for low gate charge, low RDS(ON) and fast switch.

  SPN180T10   SPN180T10


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SPN180T10 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN180T10 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  AC/DC Synchronous Rectifier  Load Switch  UPS  Power Tool  Motor Control FEATURES  100V/180A, RDS(ON)=3.7mΩ@VGS=10V  High density cell design for extremely low RDS(ON)  Exceptional on-resistance and maximum DC current capability  TO-220-3L and TO-263-2L package design PIN CONFIGURATION TO-220-3L TO-263-2L PART MARKING 2020/05/13 Ver 4 Page 1 SPN180T10 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G D S Description Gate Drain Source ORDERING INFORMATION Part Number Package SPN180T10T220TGB TO-220-3L SPN180T10T262RGB TO-263-2L ※ SPN180T10T220TGB : Tube ; Pb – Free ; Halogen - Free ※ SPN180T10T262RGB : Tape&Reel ; Pb–Free ; Halogen - Free Part Marking SPN180T10 SPN180T10 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Drain-Source Voltage VDSS Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current TC=25℃ TC=70℃ VGSS ID IDM Avalanche Energy, Single Pulse @ L=0.1mH, TA=25℃ EAS Power Dissipation @ TC=25℃ PD Operating Junction Temperature TJ Storage Temperature Range TSTG Thermal Resistance-Junction to Ambient RθJA Thermal Resistance-Junction to Case RθJC Note : The maximum current rating is package limited at 120A for TO-263-2L and TO-220-3L Typical 100 ±20 180 135 400 180 330 -55/150 -55/150 62 0.5 Unit V V A A mJ W ℃ ℃ ℃/W ℃/W 2020/05/13 Ver 4 Page 2 SPN180T10 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current Drain-Source On-Resistance V(BR)DSS VGS=0V,ID=250uA VGS(th) VDS=VGS,ID=250uA IGSS VDS=0V,VGS=±20V VDS=100V,VGS=0V IDSS VDS=100V,VGS=0V TJ=100℃ RDS(on) VGS=10V,ID=20A Forward Transconductance Gate Resistance Diode Forward Voltage gfs VDS=5V,ID=20A RG VGS=0V,VDS=Open, f=1MHz VSD IS=20A,VGS =0V Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VDS=50V,VGS=10V ID=20A VDS=50V,VGS=0V f=1MHz VDD=50V,VGS=10V ID=20A,RG=10Ω Min. Typ Max. Unit 100 V 2.0 4.0 ±100 nA 1 uA 100 3.4 3.7 mΩ 90 S 0.7 Ω 1.2 V 118 27 nC 21 7300 580 pF 18 35 56 nS 92 26 2020/05/13 Ver 4 Page 3 SPN180T10 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2020/05/13 Ver 4 Page 4 SPN180T10 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2020/05/13 Ver 4 Page 5 SPN180T10 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. © The SYNC Power logo is a registered trademark of SYNC Power Corporation © 2020 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 © http://www.syncpower.com 2020/05/13 Ver 4 Page 6 .


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