Document
SPN180T10
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN180T10 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
APPLICATIONS AC/DC Synchronous Rectifier Load Switch UPS Power Tool Motor Control
FEATURES 100V/180A, RDS(ON)=3.7mΩ@VGS=10V High density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current
capability TO-220-3L and TO-263-2L package design
PIN CONFIGURATION TO-220-3L
TO-263-2L
PART MARKING
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SPN180T10
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION Pin 1 2 3
Symbol G D S
Description Gate Drain Source
ORDERING INFORMATION
Part Number
Package
SPN180T10T220TGB
TO-220-3L
SPN180T10T262RGB
TO-263-2L
※ SPN180T10T220TGB : Tube ; Pb – Free ; Halogen - Free ※ SPN180T10T262RGB : Tape&Reel ; Pb–Free ; Halogen - Free
Part Marking
SPN180T10 SPN180T10
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current
TC=25℃ TC=70℃
VGSS ID IDM
Avalanche Energy, Single Pulse @ L=0.1mH, TA=25℃
EAS
Power Dissipation @ TC=25℃
PD
Operating Junction Temperature
TJ
Storage Temperature Range
TSTG
Thermal Resistance-Junction to Ambient
RθJA
Thermal Resistance-Junction to Case
RθJC
Note :
The maximum current rating is package limited at 120A for TO-263-2L and TO-220-3L
Typical 100
±20 180 135 400
180 330 -55/150 -55/150 62 0.5
Unit V V
A
A mJ W ℃ ℃ ℃/W ℃/W
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SPN180T10
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted)
Parameter
Symbol
Conditions
Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current
Zero Gate Voltage Drain Current
Drain-Source On-Resistance
V(BR)DSS VGS=0V,ID=250uA VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±20V VDS=100V,VGS=0V
IDSS VDS=100V,VGS=0V TJ=100℃
RDS(on) VGS=10V,ID=20A
Forward Transconductance Gate Resistance Diode Forward Voltage
gfs VDS=5V,ID=20A
RG
VGS=0V,VDS=Open, f=1MHz
VSD IS=20A,VGS =0V
Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf
VDS=50V,VGS=10V ID=20A
VDS=50V,VGS=0V f=1MHz
VDD=50V,VGS=10V ID=20A,RG=10Ω
Min. Typ Max. Unit
100
V
2.0
4.0
±100 nA
1 uA
100
3.4 3.7 mΩ
90
S
0.7
Ω
1.2 V
118
27
nC
21
7300
580
pF
18
35
56 nS
92
26
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SPN180T10
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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SPN180T10
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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SPN180T10
N-Channel Enhancement Mode MOSFET
Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation.
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