Document
FETek Technology Corp.
Green Device Available Super Low Gate Charge Excellent Cdv/dt effect decline Advanced high cell density Trench
technology
FKBB0208
Dual N-Ch 100V Fast Switching MOSFETs
Product Summary
BVDSS 100V
RDSON 290mΩ
ID 4.9A
General Description
The FKBB0208 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKBB0208 meet the RoHS and Green Product requirement with full function reliability approved.
PRPAK3x3 Pin Configuration
Absolute Maximum Ratings
Symbol VDS VGS
ID@Tc=25℃ ID@Tc=70℃
IDM PD@Tc=25℃
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol RθJA RθJC
Parameter Thermal Resistance Junction-ambient 1
Thermal Resistance J.