N-Channel MOSFET
FETek Technology Corp.
100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect ...
Description
FETek Technology Corp.
100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench
technology
Description
The FKBA0024A is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKBA0024A meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
FKBA0024A
N-Ch 100V Fast Switching MOSFETs Product Summary
BVDSS 100V
RDSON 10mΩ
ID 104A
PRPAK5X6 Pin Configuration
Absolute Maximum Ratings
Symbol
VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG TJ
Thermal Data
Symbol RθJA RθJC
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1,6 Continuous Drain Current, VGS @ 10V1,6 Pulsed Drain Current2 Single Pulse Avalanche Energy3
Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Jun...
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