FKCC8233

FETek Technology Corp.  Green Device Available  Super Low Gate Charge  Excellent CdV/dt effect decline  Advanced high cell density Trench technology FKCC8233 Dual N-Ch Fast Switching MOSFETs Product Summary BVDSS 20V RDSON 7.2mΩ ID 11A General Description DFN2x3 Pin Configuration The FKCC8233 is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The FKCC8233 meet the RoHS and Green Product requirement with full function reliability approved. Pin1 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V1 Continuous Drain Current, VGS @ 4.5V1 Pulsed Drain Current2 Total Power Dissipation1 Storage Temperature Range Operating Junction Temperature Range Rating 20 ±12 11 8.8 70 1.56 -55 to 150 -55 to 150 Units V...