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FKD18N20 Dataheets PDF



Part Number FKD18N20
Manufacturers FETek
Logo FETek
Description N-Channel MOSFET
Datasheet FKD18N20 DatasheetFKD18N20 Datasheet (PDF)

FETek Technology Corp.  Super Low Gate Charge  Green Device Available  Excellent Cdv/dt effect decline  Advanced high cell density Trench technology FKD18N20 N-Ch 200V Fast Switching MOSFETs Product Summary BVDSS 200V RDSON 170mΩ ID 18A Description TO252 Pin Configuration The FKD18N20 is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The FKD18N20 meet th.

  FKD18N20   FKD18N20


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FETek Technology Corp.  Super Low Gate Charge  Green Device Available  Excellent Cdv/dt effect decline  Advanced high cell density Trench technology FKD18N20 N-Ch 200V Fast Switching MOSFETs Product Summary BVDSS 200V RDSON 170mΩ ID 18A Description TO252 Pin Configuration The FKD18N20 is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The FKD18N20 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range Thermal.


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