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FETek Technology Corp.
100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench
technology
Description
The FKS3103 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKS3103 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
FKS3103
P-Ch 30V Fast Switching MOSFETs Product Summary
BVDSS -30V
RDSON 20mΩ
ID -9.5A
SOP8 Pin Configuration
Absolute Maximum Ratings
Symbol VDS VGS
ID@TA=25℃ ID@TA=70℃
IDM EAS IAS PD@TA=25℃ PD@TA=70℃ TSTG
TJ
Thermal Data
Symbol
RθJA
RθJC
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3
Avalanche Current Total Power Dissipation4 Total Power Dissipation4 Storage Tempera.