BUZ354
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE BUZ354
VDSS 500 V
RDs(on) 0.8 G
ID 8A
• HIGH SPEED SW...
BUZ354
N - CHANNEL ENHANCEMENT MODE POWER MOS
TRANSISTOR
TYPE BUZ354
VDSS 500 V
RDs(on) 0.8 G
ID 8A
HIGH SPEED SWITCHING HIGH VOLTAGE - 500V FOR OFF-LINE SMPS HIGH CURRENT - 8A FOR UP TO 200W SMPS ULTRA FAST SWITCHING - FOR OPERATION
AT < 100KHz EASY DRIVE - FOR REDUCED COST AND
SIZE
INDUSTRIAL APPLICATIONS: SWITCHING POWER SUPPLIES MOTOR CONTROLS
N - channel enhancement mode POWER MOS field effect
transistor. Easy drive and very fast switching times make this POWER MOS
transistor ideal for high speed switching applications. Typical uses include switching mode power supplies, uninterruptible power supplies and motor speed control.
TO-218
.G~INTERNAL SCHEMATIC
DIAGRAM
0
5
ABSOLUTE MAXIMUM RATINGS
Vos VOGR VGS
10
10M
Ptot Tstg Tj
Drain-source voltage (VGS =0) Drain-gate voltage (RGS =20 KG)
Gate-source voltage
Drain current (continuous) Tc =25°C
Drain current (pulsed)
Total dissipation at Tc <25°C Storage temperature . Max. operating junction tem...