SGSP222

SGSP222 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP222 Voss 50 V ROS(on) 0.13 fl 10 10 A HIGH SPEED SWITCHING APPLICATIONS ULTRA FAST SWITCHING EASY DRIVE FOR REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS: SWITCHING POWER SUPPLIES MOTOR CONTROLS. N - channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switching times make this POWER MOS transistor ideal for high speed switching applications. Uses include general motor speed control, low voltage DC/DC converters and solenoid driving. SOT-82 OPTION SOT-194 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS VOGR VGS Tstg Tj Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 Kfl) Gate-source voltage Drain current (cont.) at Tc =25°C Drain current (cont.) at Tc=100°C Drain current (pulsed) Drain inductive current, clamped Total dissipation at Tc <25°C Derating factor Storage temperature Max. operating junction temperature (e) Pulse width limited by...