SI2310
20V N-Channel Enhancement Mode MOSFET
VDS= 20V RDS(ON), Vgs@4.5V, Ids@5.0A < 28mΩ RDS(ON) Vgs@2 5V, Ids@4 5A < 35mΩ
Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance
Package Dimensions
D
SOT-23
GS
REF.
A B C D E
F
Millimeter Min. Max. 2.80 3.00 2.30 2.50 1.20 1.40 0.30 0.50
0 0.10
0.45 0.55
REF.
G ...
