ARCHIVE INFORMATION ARCHIVE INFORMATION
Freescale Semiconductor Technical Data
Document Number: MRF282 Rev. 15, 5/2006...
ARCHIVE INFORMATION ARCHIVE INFORMATION
Freescale Semiconductor Technical Data
Document Number: MRF282 Rev. 15, 5/2006
RF Power Field Effect
Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.
Specified Two--Tone Performance @ 2000 MHz, 26 Volts Output Power — 10 Watts PEP Power Gain — 10.5 dB Efficiency — 28% Intermodulation Distortion — --31 dBc
Specified Single--Tone Performance @ 2000 MHz, 26 Volts Output Power — 10 Watts CW Power Gain — 9.5 dB Efficiency — 35%
Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 10 Watts CW Output Power
Features
Excellent Thermal Stability Characterized with Series Equivalent Large--Signal
Impedance Parameters RoHS Compliant Available in Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel.
Table 1. Maximum Ratings
Rati...
