.!.'~=:1-m= S~DG©OSO@-~T[]HJ~O©lMJOSO@O~DN©~
SGSP591 SGSP592
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
TYPE
...
.!.'~=:1-m= S~DG©OSO@-~T[]HJ~O©lMJOSO@O~DN©~
SGSP591 SGSP592
N - CHANNEL ENHANCEMENT MODE
POWER MOS
TRANSISTORS
TYPE
SGSP591 SGSP592
Voss 60 V 50 V
ROS(on)
0.0330 0.0330
10 40 A 40 A
HIGH SPEED SWITCHING APPLICATIONS 50 - 60 VOLTS FOR INVERTERS AND UPS HIGH CURRENT - VOS(on) :5 1V at 20A RATED FOR UNCLAMPED INDUCTIVE
SWITCHING (ENERGY TEST) EASY DRIVE - REDUCES SIZE AND COST
INDUSTRIAL APPLICATIONS: DC/DC CONVERTERS MOTOR CONTROLS
N - channel enhancement mode POWER MOS field effect
transistors. Easy drive and very fast switching times make these POWER MOS
transistors ideal for high speed switching circuits applications such as DC/DC converters, UPS, inverters, battery chargers and solar power converters.
TO-3
INTERNAL SCHEMATIC DIAGRAM
s
ABSOLUTE MAXIMUM RATINGS
Vos VOGR VGS
10 10
10M (e) Ptot
Tstg Tj
Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 KO) Gate-source voltage Drain current (cont.) at Tc = 25°C Drain current (cont....