SGSP591

.!.'~=:1-m= S~DG©OSO@-~T[]HJ~O©lMJOSO@O~DN©~ SGSP591 SGSP592 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE SGSP591 SGSP592 Voss 60 V 50 V ROS(on) 0.0330 0.0330 10 40 A 40 A HIGH SPEED SWITCHING APPLICATIONS 50 - 60 VOLTS FOR INVERTERS AND UPS HIGH CURRENT - VOS(on) :5 1V at 20A RATED FOR UNCLAMPED INDUCTIVE SWITCHING (ENERGY TEST) EASY DRIVE - REDUCES SIZE AND COST INDUSTRIAL APPLICATIONS: DC/DC CONVERTERS MOTOR CONTROLS N - channel enhancement mode POWER MOS field effect transistors. Easy drive and very fast switching times make these POWER MOS transistors ideal for high speed switching circuits applications such as DC/DC converters, UPS, inverters, battery chargers and solar power converters. TO-3 INTERNAL SCHEMATIC DIAGRAM s ABSOLUTE MAXIMUM RATINGS Vos VOGR VGS 10 10 10M (e) Ptot Tstg Tj Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 KO) Gate-source voltage Drain current (cont.) at Tc = 25°C Drain current (cont....