SGSP577

SGSP577 ·N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP577 Voss 200 V Ros(on) 0.170 10 20 A HIGH SPEED SWITCHING APPLICATIONS HIGH CURRENT - FOR TELECOMM POWER SUPPLIES ULTRA FAST SWITCHING EASY DRIVE FOR REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS: SWITCHING MODE POWER SUPPLIES MOTOR CONTROLS FOR ROBOTICS. N - channel enhancement mode POWER MaS field effect transistor. Easy drive and very fast switching times make this POWER MaS transistor ideal for high speed switching applications. Typical applications include robotics, UPS, SMPS and" DCIDC converters, electric vehicle drives and a DC switch for telecommunications. TO-3 INTERNAL SCHEMATIC DIAGRAM 5 ABSOLUTE MAXIMUM RATINGS Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 KO) Gate-source voltage Drain current (cont.) at Tc = 25°C Drain current (cont.) at Tc= 100°C Drain current (pulsed) Drain inductive current, clamped Total dissipation at Tc <25°C Derating factor Tstg Sto...