SGSP364 SGSP369
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
TYPE
SGSP364 SGSP369
Voss 450 V 500 V
ROS(on) 1.5 ...
SGSP364 SGSP369
N - CHANNEL ENHANCEMENT MODE POWER MOS
TRANSISTORS
TYPE
SGSP364 SGSP369
Voss 450 V 500 V
ROS(on) 1.5 {} 1.5 {}
10 5A 5A
HIGH SPEED SWITCHING APPLICATIONS HIGH VOLTAGE - FOR ELECTRONIC LAMP
BALLAST ULTRA FAST SWITCHING EASY DRIVE - REDUCED COST AND SIZE
INDUSTRIAL APPLICATIONS: ELECTRONIC LAMP BALLAST DC SWITCH
N - channel enhancement mode POWER MOS field effect
transistors. Easy drive and very fast switching times make these POWER MOS
transistors ideal for high speed switching applications. Applications include DC switch, constant current source, ultrasonic equipment and electronic ballast for fluorescent lamps.
,
TO-220
INTERNAL SCHEMATIC DIAGRAM
5
ABSOLUTE MAXIMUM RATINGS
VOS
VOGR
VGS
10 10
10M (e) 10LM (e) Ptot
T stg Tj
Drain-source voltage (VGS =0) Drain-gate voltage (RGS =20 KU)
Gate-source voltage
Drain current (cont.) at Tc =25°C Drain current (cont.) at Tc = 100°C
Drain current (pulsed)
Drain inductive current, clamped
Total d...
