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SGSP363 SGSP367
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
TYP...
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SGSP363 SGSP367
N - CHANNEL ENHANCEMENT MODE POWER MOS
TRANSISTORS
TYPE
SGSP363 SGSP367
Voss 250 V 200 V
Ros(on) 0.450 0.330
10 10 A 12 A
HIGH SPEED SWITCHING APPLICATIONS TELECOMMUNICATION APPLICATIONS RATED FOR UNCLAMPED INDUCTIVE
SWITCHING (ENERGY TEST) ULTRA FAST SWITCHING EASY DRIVE FOR REDUCED COST AND SIZE
INDUSTRIAL APPLICATIONS: ROBOTICS SWITCHING POWER SUPPLIES
N - channel enhancement mode POWER MOS field effect
transistor. Easy drive and very fast switching times make this POWER MOS
transistor ideal for high speed switching applications. Typical applications include robotics, uninterruptible power supplies, motor control and solenoid drives.
TO-220
INTERNAL SCHEMATIC DIAGRAM
5
ABSOLUTE MAXIMUM RATINGS
Vos VOGR VGS
10 10
10M (e) Ptot
Tstg Tj
Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 KO) Gate-source voltage Drain current (cont.) at Tc = 25°C Drain current (cont.) at...