SGSP361 SGSP362
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
TYPE
SGSP361 SGSP362
Voss 100 V 80 V
Ros(on) 0.150...
SGSP361 SGSP362
N - CHANNEL ENHANCEMENT MODE POWER MOS
TRANSISTORS
TYPE
SGSP361 SGSP362
Voss 100 V 80 V
Ros(on) 0.150 0.1 0
10 18 A 22 A
HIGH SPEED SWITCHING APPLICATIONS 80 - 100 VOLTS - FOR UPS APPLICATIONS ULTRA FAST SWITCHING RATED FOR UNCLAMPED INDUCTIVE
SWITCHING (ENERGY TEST) EASY DRIVE FOR REDUCED SIZE AND COST
INDUSTRIAL APPLICATIONS: UNINTERRUPTIBLE POWER SUPPLIES MOTOR CONTROLS
N - channel enhancement mode POWER MOS field effect
transistor. Easy drive and very fast switching times make this POWER MOS
transistor ideal for high speed switching applications. Typical applications include UPS, battery chargers, printer hammer drivers, solenoid drivers and motor control.
,
INTERNAL SCHEMATIC DIAGRAM
5
ABSOLUTE MAXIMUM RATINGS
VOS VOGR VGS 10 10 ION! (e) Ptot
Tstg Tj
Drain-source voltage (VGs=O) Drain-gate voltage (RGS = 20 KO) Gate-source voltage
Drain current (cont.) at Tc =25°C Drain current (cont.) at Tc = 100°C
Drain current (pulsed)...