FKV575

MOS FET FKV575 ■Features High Current Capability (ID:75A (DC)) Low on-resistance (RDS(on):7mΩ typ) Avalanche energy guarantee November, 2008 ■Package----FM20(TO220 Full Mold) ■Applications DC-DC Converters High speed switching ■Equivalent circuit D (2) G (1) S (3) Absolute maximum ratings Characteristic Symbol Rating (Ta=25°C） Unit Drain to Source Voltage VDSS 50 V Gate to Source Voltage VGSS ±20 V Continuous Drain Current ID ±75A A Pulsed Drain Current ID(pulse) １) ±200A A Maximum Power Dissipation PD 40 (Tc=25°C) W Single Pulse Avalanche Energy EAS ２) 300 mJ Avalanche Current IAS 75 A Channel Temperature Tch 150 °C Storage Temperature Tstg －55 to 150 １) PW≤100μs，duty cycle≤１% ２) VDD=20V,L=64μH，ILp=75A,unclamped,RG=50Ω, See Fig.1 °C . SANKEN ELECTRIC CO.,LTD. http://www.sanken-ele.co.jp T02-016EA-081114 MOS FET FKV575 November, 2008 Characteristic Drain to Source breakdown Voltage ...