600V N-Channel MOSFET
SLF60R080SS
General Description
This Power MOSFET is producFeeadtuurseisng Maple semi‘s
Advanced Super-Junction technol...
Description
SLF60R080SS
General Description
This Power MOSFET is producFeeadtuurseisng Maple semi‘s
Advanced Super-Junction technology. This advanced technology has--b7L.oe6wAe,gn5a0tee0Vsch,paRerDgcSe(oi(na)ttylylppy.i=cat0al.5i2lΩo5@nrCeV)dGS = 10 V to minimize conduction loss, pr-oHvigihdreugsguedpneesrsior switching performance, and withstand hig- Fhaset nsweitrcghiyngpulse in the avalanche and commutation m--oI1md0p0er%o.vaevdadlavn/dcht ecatpeastbeildity These devices are well suited for AC/DC power conversion
GD S
TO-220F
SLF60R080SS 600V N-Channel MOSFET
Features
- 47A, 600V, RDS(on) typ.= 68mΩ@VGS =10 V - Low gate charge ( typical 88nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
D
G
S
Absolute Maximum Ratings
TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current
- Continuous (TC = 25℃) - Continuous (TC = 100℃)
IDM Drain Current - Pulsed
(Note 1)
VGSS Gate-Source Voltage
EAS
Single ...
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