N-Channel MOSFET
SLH60R080SS
General Description
This Power MOSFET is producFeeadtuurseisng Maple semi‘s
Advanced Super-Junction This ...
Description
SLH60R080SS
General Description
This Power MOSFET is producFeeadtuurseisng Maple semi‘s
Advanced Super-Junction This advanced technology
theacsh--nbL7oo.e6wlAeo,gng5ay0tee0. Vsch,paRerDgcSe(oi(na)ttylylppy. i=cat0al .5i2lΩo5n@rCeV)dGS
=
10
V
to minimize conduction loss, pr-oHvigihdreugsguedpneesrsior switching performance, and withstand hig-- F1h0a0set%nswaevitracghlaiynngcpheutlessetedin the avalanche and commutation m-oImdpero.ved dv/dt capability
These devices are well suited for AC/DC power conversion
GDS
TO-247
SLH60R080SS 600V N-Channel MOSFET
Features
- 47A, 600V, RDS(on) typ.= 68mΩ@VGS =10 V - Low gate charge ( typical 88nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
D
G
S
Absolute Maximum Ratings
TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS Drain-Source Voltage
ID Drain Current
- Continuous (TC = 25℃) - Continuous (TC = 100℃)
IDM Drain Current - Pulsed
(Note 1)
VGSS Gate-Source Voltage
EAS
S...
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