N-Channel MOSFET
SLW60R080SS
General Description
This Power MOSFET is producFeeadtuurseisng Maple semi‘s
Advanced
Super-Junction
tech...
Description
SLW60R080SS
General Description
This Power MOSFET is producFeeadtuurseisng Maple semi‘s
Advanced
Super-Junction
technology. - 7.6A, 500V,
RDS(on)
typ.
=
0.5Ω@VGS
=
10
V
This advanced technology has-bLoewegnateeschpaergcei(atyllpyicatal i2l5onrCe)d
to minimize conduction loss, pr-oHvigihdreugsgeudpneesrsior switching
performance, and withstand hig-- F1h0a0set%nswaevitracghlaiynngcpheutlessetedin the
avalanche and commutation m-oImdpero.ved dv/dt capability
These devices are well suited for AC/DC power conversion
G
D S
TO-3P
SLW60R080SS 600V N-Channel MOSFET
Features
- 47A, 600V, RDS(on) typ.= 68mΩ@VGS =10 V - Low gate charge ( typical 88nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
D
G
S
Absolute Maximum Ratings
TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS Drain-Source Voltage
Drain Current ID
- Continuous (TC = 25℃) - Continuous (TC = 100℃)
IDM Drain Current - Pulsed
(Note 1)
VGSS Gate-Source V...
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