SFX33N10
33A, 100V N-CHANNEL MOSFET
GENERAL DESCRIPTION
These N-Channel enhancement mode power field effect transistor...
SFX33N10
33A, 100V N-CHANNEL MOSFET
GENERAL DESCRIPTION
These N-Channel enhancement mode power field effect
transistors are produced using Hi-semicon’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies,active power factor correction, electronic lamp ballasts based on half bridge topology
2
TO-251J-3L 1
3 1.Gate 2.Darin 3.Source TO-251D-3L
TO-252-2L
FEATURES
◆ 33A,100V,RDS(on)(typ)=34m@VGS=10V ◆ Low gate charge ◆ Low Crss ◆ Fast switching ◆ Improved dv/dt capability
TO-220-3L
TO-220F-3L
ORDERING INFORMATION
Part No.
Package
SFP33N10 SFF33N10 SFD33N10TR SFD33N10
TO-220-3L TO-220F-3L TO-252-2L TO-252-2L
Marking
SFP33N10 SFF33N10 SFD33N10 SFD33N10
Material Pb free Pb free Pb free Pb free
Pa...