M29W640FT

M29W640FT M29W640FB 64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory Feature summary Supply voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) Asynchronous Random/Page Read – Page Width: 4 Words – Page Access: 25ns – Random Access: 60ns, 70ns Programming time – 10 s per Byte/Word typical – 4 Words / 8 Bytes Program 135 Memory Blocks – 1 Boot Block and 7 Parameter Blocks, 8 KBytes each (Top or Bottom location) – 127 Main Blocks, 64 KBytes each Program/Erase Controller – Embedded Byte/Word Program algorithms Program/Erase Suspend and Resume – Read from any Block during Program Suspend – Read and Program another Block during Erase Suspend Unlock Bypass Program command – Faster Production/Batch Programming VPP/WP pin for Fast Program and Write Protect Temporary Block Unprotection mode Common Flash Interface – 64-bit Security Code Table 1. Device Codes Root Part Number M29W640FT M29W640FB TSOP48 (N) 12 x 20mm T...