Power Transistors
2SC5406, 2SC5406A
Silicon NPN triple diffusion mesa type
For horizontal deflection output
Unit: mm
...
Power
Transistors
2SC5406, 2SC5406A
Silicon
NPN triple diffusion mesa type
For horizontal deflection output
Unit: mm
s Features
q High breakdown voltage, and high reliability through the use of a glass passivation layer
q High-speed switching q Wide area of safe operation (ASO)
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO VCES VCEO VEBO ICP IC IB
PC
1500 1500 600
5 20 14 8 100 3
Junction temperature Storage temperature
Tj 150 Tstg –55 to +150
Unit V V V V A A A
W
˚C ˚C
3.3±0.3 0.7±0.1 4.5
15.5±0.5 φ3.2±0.1
3.0±0.3 5° 5°
23.4 22.0±0.5
2.0 1.2 10.0 26.5±0.5
4.0 2.0±0.2 1.1±0.1
5.45±0.3
5°
5° 5°
5°
2.0 18.6±0.5
5.45±0.3
0.7±0.1
5.5±0.3
2.0
123
1:Base 2:Collector 3:Emitter TOP–3E Full Pack Package
s Electrical Characteristics (TC...
