ABPMM32403606A
BOOKLY MICRO
N-Channel Enhancement Mode MOSFET
Features
Pin Description
+30V / 4A , N-MOSFET
RDS(ON)=30mΩ(typ.) @ VGS=10V RDS(ON)=50mΩ(typ.) @ VGS=4.5V
Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant)
Applications
D
G S
Top View of SOT-23
D
Power Management in Notebook Computer,
Portable Eq...
