BM2341

BM2341 P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION BM2341 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23-3L 3 D GS 12 1.Gate 2.Source 3.Drain FEATURE z -20V/-3.3A, RDS(ON) = 36m-ohm (Typ.) @VGS = -10V z -20V/-2.8A, RDS(ON) = 45m-ohm @VGS = -4.5V z -20V/-2.3A, RDS(ON) = 55m-ohm @VGS = -1.8V z Super high density cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability z SOT-23-3L package design PART MARKING SOT-23-3L 3 41YA 12 Y: Year Code A: Process Code ORDERING INFORMATION ...