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B4NK60Z Dataheets PDF



Part Number B4NK60Z
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-CHANNEL Power MOSFET
Datasheet B4NK60Z DatasheetB4NK60Z Datasheet (PDF)

STB4NK60Z-1, STB4NK60ZT4 STD4NK60Z-1, STD4NK60ZT4 Datasheet N-channel 600 V, 1.7 Ω typ., 4 A SuperMESH™ Power MOSFETs in I2PAK, D2PAK, IPAK and DPAK packages TAB I2PAK 1 2 3 TAB IPAK 3 2 1 TAB 3 D2PAK1 TAB 23 1 DPAK D(2, TAB) G(1) S(3) AM01475V1 Product status STB4NK60Z-1 STB4NK60ZT4 STD4NK60Z-1 STD4NK60ZT4 Features Order codes VDS RDS(on) max. STB4NK60Z-1 STB4NK60ZT4 STD4NK60Z-1 600 V 2Ω STD4NK60ZT4 • Extremely high dv/dt capability • 100% avalanche tested • Gate charge minim.

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STB4NK60Z-1, STB4NK60ZT4 STD4NK60Z-1, STD4NK60ZT4 Datasheet N-channel 600 V, 1.7 Ω typ., 4 A SuperMESH™ Power MOSFETs in I2PAK, D2PAK, IPAK and DPAK packages TAB I2PAK 1 2 3 TAB IPAK 3 2 1 TAB 3 D2PAK1 TAB 23 1 DPAK D(2, TAB) G(1) S(3) AM01475V1 Product status STB4NK60Z-1 STB4NK60ZT4 STD4NK60Z-1 STD4NK60ZT4 Features Order codes VDS RDS(on) max. STB4NK60Z-1 STB4NK60ZT4 STD4NK60Z-1 600 V 2Ω STD4NK60ZT4 • Extremely high dv/dt capability • 100% avalanche tested • Gate charge minimized • Zener-protected PTOT 70 W ID 4A Applications • Switching applications Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. DS2818 - Rev 9 - April 2018 For furt.


NAS1635-04-10 B4NK60Z D4NK60Z


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