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SSCE12V11N1 Dataheets PDF



Part Number SSCE12V11N1
Manufacturers AFSEMI
Logo AFSEMI
Description TVS Diodes
Datasheet SSCE12V11N1 DatasheetSSCE12V11N1 Datasheet (PDF)

SSCE12V11N1 SSCE12V11N1 Lo BVV Low-Capacitance Bidirectional Micro Packaged TVS Diodes for ESD Protection  Description  PIN configuration The SSCE12V11N1 is designed with Weipan Punch-Through process TVS technology to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to ESD. Because of its small size, it is suited for use in cellular phones, MP3 players, digital ca.

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SSCE12V11N1 SSCE12V11N1 Lo BVV Low-Capacitance Bidirectional Micro Packaged TVS Diodes for ESD Protection  Description  PIN configuration The SSCE12V11N1 is designed with Weipan Punch-Through process TVS technology to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to ESD. Because of its small size, it is suited for use in cellular phones, MP3 players, digital cameras and many other portable applications where board space comes at a premium. Also because of its low capacitance, it is suited for use in high frequency designs such as USB 2.0 high speed, VGA, DVI, SDI and other high speed line applications. It has been specifically designed to protect sensitive components which are connected to high-speed data and transmission lines from overvoltage caused by ESD(electrostatic discharge), CDE (Cable Discharge Events),and EFT (electrical fast transients.


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