SSC8K21GN3

SSC8K21GN3 P-Channel Enhancement Mode MOSFET with Schottky Diode  Features P-MOSFET VDS VGS -20V ±8V Schottky VR IR 20V 35uA RDSon TYP 130mR@-4V5 170mR@-2V5 230mR@-1V8 VF TYP [email protected] ID -2A IO 1A  Applications  Li Battery Charging  High Side DC/DC Converter  High Side Driver for Brushless DC Motor  Power Management in Portable, Battery Powered Devices  Pin configuration Top View 8765 KKDD  General Description SSC8K21GN3 combines a P-Channel enhancement mode power MOSFET which is produced with high cell density and DMOS trench technology and a low forward voltage schottky diode. the tiny and thin outline saves PCB consumption.  Package Information KD AASG 12 3 4 SSC-1V0 Package：DFN3x2 http://www.afsemi.com 1/5 Analog Future SSC8K21GN3  Absolute Maximum Ratings @ TA = 25°C unless otherwise specified Parameter Symbol Ratings Unit Drain-Source Voltage Gate-Source Voltage VDS -20 VGS ±8 V Drain Current (Note 1) Continuous Pulsed -2...