SSC8K23GN2
P-Channel Enhancement Mode MOSFET with Schottky Diode
Features
P-MOSFET VDS VGS
RDSon TYP 135mR@-4V5
ID...
SSC8K23GN2
P-Channel Enhancement Mode MOSFET with
Schottky Diode
Features
P-MOSFET VDS VGS
RDSon TYP 135mR@-4V5
ID
Applications
Bidirectional blocking switch; DC-DC conversion applications; Li-battery charging;
-20V ±8V
Schottky
180mR@-2V5 240mR@-1V8
-2A
Pin configuration
Top View
VR IR
VF
20V 35uA 410mV@0.5A
General Description
IO 1A
654
KG
S
SSC8K23GN2 combines a P-Channel enhancement mode power MOSFET which is produced with high
KD
cell density and DMOS trench technology and a low
forward voltage
schottky diode. the tiny and thin
outline saves PCB consumption.
A NC D 123
Package Information
ackage:DFN2x2
Unit:mm
Dim Min Typ Max
A 1.95 2 2.08
B 1.95 2 2.08
C 0.5 0.6 0.7
D 0.9 1 1.1
E
0.545
0.575
0.605
F - 0.13 -
G 0.2 0.25 0.3
H 0.25 0.3 0.35
I - 0.65 -
J - 0.45 -
K - 0.15 -
L - 0.23 -
SSC-1V0
http://www.afsemi.com
1/5
Analog Future
SSC8K23GN2
Absolute Maximum Ratings @TA=25℃ unless otherwise noted
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