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SSCP005GS3

AFSEMI

High Frequency High Gain PNP Power BJT


Description
SSCP005GS3 High Frequency High Gain PNP Power BJT  Features PNP BJT VCE -40v VBE -6v Vcesat typ -150mv Ic -3A  Applications  battery powered circuits  low in-line power dissipation circuits  Pin configuration  General Description This device is produced with advanced high carrier density technology, which is especially used to minimize saturati...



AFSEMI

SSCP005GS3

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