SSCP005GSB
High Frequency High Gain PNP Power BJT
Features
PNP BJT VCE -40v
VBE -6v
Vcesat typ -150mv
Ic -3A
A...
SSCP005GSB
High Frequency High Gain
PNP Power BJT
Features
PNP BJT VCE -40v
VBE -6v
Vcesat typ -150mv
Ic -3A
Applications Load Switch Portable Devices DCDC Conversion
General Description This device is produced with advanced high carrier density
technology, which is especially used to minimize saturation voltage drop. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package. Excellent thermal and electrical capabilities. Package Information
Pin configuration Pin configuration(Top view)
SSC-1V0
http://www.afsemi.com
1/4
Analog Future
SSCP005GSB
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current TA = 25°C (Note 1) Collector Curre...