SSC8325GS1

SSC8325GS1 Dual P-Channel Enhancement Mode MOSFET  Features VDS VGS RDSon TYP 38mR@-4V5 ID ESD  Applications  Load Switch  Portable Devices  DCDC conversion -20V ±8V 47mR@-2V5 61mR@-1V8 -6A 3KV  Pin Configuration  General Description Top View This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package. Excellent thermal and D: Drain; G: Gate; S: Source electrical capabilities.  Package Information ⑧ ⑦ ⑥⑤ ①② ③ ④ SOP8 Unit:mm SSC-1V0 http://www.afsemi.com 1/4 Analog Future SSC8325GS1  Absolute Maximum Ratings @TA=25℃ unless otherwise noted Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGSS Drain Cur...