DatasheetsPDF.com

SSC8313GS1

Part Number	SSC8313GS1
Manufacturer	AFSEMI
Description	Dual P-Channel Enhancement Mode MOSFET
Published	Dec 15, 2018
Detailed Description	SSC8313GS1 Dual P-Channel Enhancement Mode MOSFET  Features VDS VGS RDSon TYP 38mR@-4V5 ID  Applications  Load ...
Datasheet	SSC8313GS1 PDF File

Overview

SSC8313GS1 Dual P-Channel Enhancement Mode MOSFET  Features VDS VGS RDSon TYP 38mR@-4V5 ID  Applications  Load Switch  Portable Devices  DCDC conversion -12V ±8V 47mR@-2V5 -6A 61mR@-1V8  Pin Configuration  General Description Top View D1 D1 D2 D2 This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance.
This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and S1 G1 S2 G2 low in-line power dissipation are needed in a very small D: Drain; G: Gate; S: Source outline surface mount package.
Excellent thermal and elect...

Similar Datasheet

SSC8313GS1 Dual P-Channel Enhancement Mode MOSFET - AFSEMI

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)