SSC8205GTA
Common Drain N-Channel Enhancement Mode MOSFET
Features
VDS VGS
RDSon TYP
ID
18mR@4V5
20V ±12V 20mR@3V85
6A
22mR@2V5
Advanced trench process technology
High Density Cell Design for Ultra Low On-Resistance
High Power and Current handling capability
Fully Characterized Avalanche Voltage and Current
Applications
Li-ion battery pro...
