SSC8362GS1
Dual N-Channel Enhancement Mode MOSFET
Features
VDS 60V
VGS ±20V
RDSon TYP 30mR@10V 35mR@4V5
ID 6.5A
General Description
This N-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is suitable for use as a load switch，power ...
