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SSC8326GS1V1.0

AFSEMI
Part Number SSC8326GS1V1.0
Manufacturer AFSEMI
Description Dual N-Channel Enhancement Mode MOSFET
Published Dec 15, 2018
Detailed Description SSC8326GS1 Dual N-Channel Enhancement Mode MOSFET  Features  VDS VGS 20V ±12V RDSon TYP 20mR@4V5 22mR@3V8 24mR@2V...
Datasheet PDF File SSC8326GS1V1.0 PDF File

SSC8326GS1V1.0
SSC8326GS1V1.0

Overview
SSC8326GS1 Dual N-Channel Enhancement Mode MOSFET  Features  VDS VGS 20V ±12V RDSon TYP 20mR@4V5 22mR@3V8 24mR@2V5 ID 6A   General Description This device combines 2 N-channel enhancement mode MOSFETs,which use advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a load switch or in PWM applications.
 Package Information Applications  Li-ion battery;  Load swich;  Battery charger Pin configuration Top View D1 D1 D2 D2 S1 G1 S2 G2 ⑧ ⑦ ⑥⑤ ①② ③ ④ SOP8 Unit:mm SSC-1V0 1/5 http://www.
afsemi.
com  Order information Device Package SSC8326GS1 Marking Shipping SSC8326GS...


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