SSC8336GS1

SSC8336GS1 Dual N-Channel Enhancement Mode MOSFET  Features  Applications  Inverter; VDS VGS RDSon TYP ID 30V ±20V 16mR@10V 20mR@4V5 9A  Pin configuration  General Description Top View This N-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is suitable for use as a load switch，power management in PWM controlled DC/DC Converter and push-pull DC/AC Inverter Systems.  Package Information  Ordering Information Device SSC8336GS1 Marking SSC 8336GS1 Package SOP8 Qty per Reel 2500 Reel Size 13 Inch SSC-1V0 http://www.afsemi.com 1/6 Analog Future  Thermal resistance ratings SSC8336GS1  Absolute Maximum Ratings @ TA = 25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGSS Continuous Drain Current@TA=25o ID Plused Drain Current (Note 1) IDM Total Power Dissipation (Not...